| PART |
Description |
Maker |
| USD700 USD432 USD492 |
0.35 um ULC Series with Embedded DPRAM
|
ATMEL Corporation
|
| DPX-C710-14 |
AMD? Embedded R-Series Gaming Platform
|
Advantech Co., Ltd.
|
| DPX-S430-14 |
AMD? Embedded R-Series (Fusion) Gaming Platform
|
Advantech Co., Ltd.
|
| SDED5-001G-NAT |
mDOC H3 Embedded Flash Drive (EFD) featuring Embedded TrueFFS? Flash Management Software
|
Sanken electric
|
| CAPA111-17 |
3.5 Embedded SBC with AMD G-Series APU, AMD A50M, LVDS/VGA, Dual LANs
|
Axiomtek Co., Ltd.
|
| 256 600 120 ATL25_432 ATL25 ATL25_976 ATL25_100 AT |
ASIC 专用集成电路
From old datasheet system
The ATL25 series gate array and embedded array families from Atmel are fabricated on a 0.25 micron CMOS process with 5 levels of metal. This family features arrays with up to 6.9 million routable gates and 976 pins. The high density and hi
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| AM28F010A AM28F010A-120EC AM28F010A-120ECB AM28F01 |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms
0.5MM, ZIF, SMT, 42 POSITION, EMBOSS TAPE T&R RoHS Compliant: Yes
CAP 100PF 1500V 20% NP0(C0G) SMD-1808 TR-13 PLATED-NI/SN
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位28亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 200 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 150 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PDSO32
|
Advanced Micro Devices, Inc.
SPANSION LLC
ADVANCED MICRO DEVICES INC
|
| QL4016-4PLM QL4016 QL4016-0CF100C QL4016-0CF100I Q |
16/000 Usable PLD Gate QuickRAM ESP Combining Performance/ Density and Embedded RAM
GT 19C 19#16 SKT RECP
Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GT; No. of Contacts:19; Connector Shell Size:22; Connecting Termination:Crimp; Circular Shell Style:Square Flange Receptacle; Body Style:Straight
GT 4C 4#16 SKT RECP
16,000 Usable PLD Gate QuickRAM ESP Combining Performance, Density and Embedded RAM 16000可用门QuickRAM ESP PLD的结合性能，密度和嵌入式内
|
List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
|
| 28F640P3 PF48F3P0ZB00 PF48F2P0ZB00 PC48F0P0VB00 PC |
Coaxial Cable; Coaxial RG/U Type:6; Impedance:75ohm; Conductor Size AWG:18; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Capacitance:16.2pF/ft; Conductor Material:Steel; Conductor Plating:Copper RoHS Compliant: Yes
Photoelectric Sensor; Sensor Input Type:Optical; Sensing Range Max:5m; Sensor Output Type:Relay; Leaded Process Compatible:No; Output Type:Relay; Peak Reflow Compatible (260 C):No; Contact Current Max:3A; Contact Rating:3A
Intel StrataFlash Embedded Memory 16M X 16 FLASH 1.8V PROM, 88 ns, PDSO56
Intel StrataFlash Embedded Memory 4M X 16 FLASH 1.8V PROM, 85 ns, PDSO56
Intel StrataFlash Embedded Memory 8M X 16 FLASH 1.8V PROM, 85 ns, PDSO56
COAXIAL CABLE; COAXIAL RG/U TYPE:11; IMPEDANCE 75OHM CONDUCTOR SIZE AWG:14; NO. STRANDS X STRAND SIZE: SOLID; JACKET MATERIAL:POLYVINYLCHLORIDE (PVC); CONDUCTOR MATERIAL:STEEL; CONDUCTOR PLATING COPPER; JACKET COLOR:BLAC 英特尔StrataFlash嵌入式存储器
Intel StrataFlash Embedded Memory 16M X 16 FLASH 1.8V PROM, 88 ns, PBGA64
Intel StrataFlash Embedded Memory 英特尔StrataFlash嵌入式存储器
Circular Connector; No. of Contacts:41; Series:; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:20; Circular Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:20-41 英特尔StrataFlash嵌入式存储器
Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT00; No. of Contacts:10; Connector Shell Size:12; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle 英特尔StrataFlash嵌入式存储器
Photoelectric Sensor; Sensor Input Type:Optical; Sensing Range Max:43mm; Sensor Output Type:Relay; Leaded Process Compatible:No; Output Type:Relay; Peak Reflow Compatible (260 C):No; Contact Current Max:3A; Contact Rating:3A 英特尔StrataFlash嵌入式存储器
Strata Flash Memory / 1 Gbit P30 Family
CAP 0.01UF 63V 10% MET-POLY-BOX RAD5MM 7.5X6.5X2.5MM BULK 8M X 16 FLASH 1.8V PROM, 85 ns, PBGA88
Circular Connector; Body Material:Aluminum; Series:PT00; No. of Contacts:41; Connector Shell Size:20; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Socket; Insert Arrangement:20-41
Intel StrataFlash Embedded Memory
|
Intel Corp.
http://
Intel, Corp.
Intel Corporation
|
| KU80960CA-16 KU80960CA-25 KU80960CA-33 |
32-bit high-performanc embedded processor 16MHz
32-bit high-performanc embedded processor 25MHz
32-bit high-performanc embedded processor 33MHz
|
Intel
|
| QU80C186EC25 ES80C188EC20 INTELCORP-KU80C188EC20 E |
16-BIT HIGH-INTEGRATION EMBEDDED PROCESSORS
80C186EC/80C188EC AND 80L186EC/80L188EC 16-BIT HIGH-INTEGRATION EMBEDDED PROCESSORS
16-BIT HIGH-INTEGRATION EMBEDDED PROCESSORS
|
Intel Corporation
|
| 80960KA A80960KA-16 A80960KA-25 |
Embedded 32-bit microprocessor 25MHz
Embedded 32-bit microprocessor 16MHz
|
INTEL[Intel Corporation]
|
